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[News]
On The Wireless Front

Staff
October 2003

1) Hack Your Way To WLAN Security  40
2) Locked Your Keys In The Car? Get Out Your Cell Phone  38
3) The Path To 4G Will Take Many Turns  33
4) SDR Forum Adding Tactical Radio SIG, Moving On Other Initiatives  18
5) LNA Boasts 20.5-dBm Gain, 0.8-dBm Noise Figure   17
ALL TOP 20 >>

Santa Clara, California
California Eastern Laboratories (CEL) recently announced the availability of an uncooled, 1310-nm, directly modulated laser-diode module. Hailing from NEC, it is designed for the 10-G transmission applications in which high-density mounting and power consumption are a concern. In the history of 10-G AlGaInAs uncooled DFB laser diodes, NEC's NX8340 Series claims to be the first one fabricated using Al oxidation-free, all-selective MOVPE without semiconductor etching.

This module should be ideal for the engineers tasked with miniaturizing their designs. It is available in two 17-pin, mini-butterfly packages: the NX8340MD pigtail version for 300-pin transponders and the NX8340ME SC receptacle version for XENPAK, X2, and XPAK transceivers. Both versions are designed to be surface mounted for easy assembly.

NEC reduced the size of these modules by eliminating the temperature-control circuitry. But it didn't compromise the integration. Aside from the laser diode, the modules include a monitor photodiode, thermistor, optical isolator, and a built-in laser-driver IC. Designed for a differential input with 50-Ω impedance, the modules feature pins for controlling and monitoring the laser bias and modulation current.

Available now, the NX8340 Series modules join CEL's growing family of NEC fiber-optic components. For more information, visit www.cel.com.

Santa Clara, California
The new single-chip analog audio subsystem from National Semiconductor Corp. targets mobile phones and other portable applications. It offers designers an easy-to-use structure and three digital interfaces. Integrated onto a single 36-bump micro-SMD package, these interfaces include pulse-code modulation (PCM) for digital voice data; I2S for digital stereo audio from sources such as MP3; and an I2C interface. The I2C digital control interface sets the mode of operation, volume levels, and other functions.

National's LM4930 Boomer audio subsystem contains the following: a stereo I2S DAC; voiceband codec; stereo-headphone amplifier; mono speaker amplifier; microphone pre-amplifier; and a sidetone generator. All of these features come with I2C control, which enables selection from a variety of operating modes. These modes determine which amplifiers are used. They also specify volume control for each amplifier as well as other performance options.

The LM4930 is available now in 36-bump micro-SMD packaging. It is priced at $3.95 in 1000-unit quantities. More information on the LM4930 is available at www.national.com/pf/LM/LM4930.html.

The XE0092 Telephone Interface Module, which also is known as a Data Access Arrangement (DAA), is now hailing from Xecom, Inc. This module contains a complete, solid-state DAA solution in a compact, low-cost, surface-mount design. The device is suitable for voice; audio; dual-tone multiple-frequency (DTMF); and data and fax applications. Its high level of integration provides users with a smaller device footprint, a lower-cost total solution, and a faster time to market for the end product.

The XE0092 incorporates network isolation, a loop-current holding circuit, and a solid-state hook switch. It also houses a ring detector, 2-4 wire converter, and Caller ID pass-through functions. All of these features are necessary for connecting a voice, audio, or data application to the telephone line.

By providing a clear signal path of less than 80 dB of second-harmonic distortion, the XE0092 provides for higher fidelity. Its low distortion permits the reliable support of 56-Kbps data signals, thereby enabling higher signal throughput. The XE0092 has the flexibility to operate at either 3.3 or 5 V. It draws just 10 mA of current while operating at 3.3 V.

Aside from having the features and performance needed to support a wide variety of applications, the XE0092 has the low ownership cost that is required to be economically attractive. That low cost is derived from price along with a compact, surface-mount package and FCC Part 68 compliance. Compliance to Part 68 Rules speeds time to market by reducing design and test requirements. It also minimizes uncertainty in certification. At just 1.20 × 1.00 × 0.3 in., the compact surface-mount package reduces board space and assembly costs.

Because of its general-purpose design, the XE0092 can be used in a wide variety of applications. An example is voice for 911 emergency systems. In addition, it has potential data applications in remote-monitoring applications. Among them are handheld terminals, security systems, and point-of-sale terminals. In the fax sector, security applications exist as well. Audio patch-to-telephone applications are beckoning from the audio sector.

The Xecom XE0092 DAA is available from stock in sample quantities. The unit price is $5.55 in 10,000-piece quantities. To find more details on this device, please visit www.xecom.com.

Fremont, California
The use of an Indium-Gallium-Phosphorous (InGaP) emitter for RF power amplifiers was pioneered by EiC Corp. In 1998, the company also was the first to introduce gain block products. Now, EiC Corp. offers a series of intermediate power amplifiers based on InGaP Heterojunction Bipolar Transistor (HBT) technology. Today, other semiconductor manufacturers are following suit. In fact, InGaP HBT product is actually superceding Aluminum-Gallium-Arsenide (AlGaAs). As they've proven, InGaP/GaAs HBT devices provide better performance and are more reliable than their AlGaAs/GaAs HBT predecessors. Now, EiC Corp. has taken the InGaP HBT capability to the next level with its introduction of the ECPXXX series of power amplifiers.

Using the same process that's applied to its existing lower-power gain blocks, EiC has made 1- and 2-W MMIC RF amplifiers available. The part numbers for these amplifiers are ECP050 (1/2 W), ECP100 (1 W), and ECP200 (2 W). According to the company, its success in exceeding 1-W capability represents a significant milestone for the industry.

The ECP amplifiers offer features like bias select, which enables the designer to operate the amplifier in Class A or AB. To maximize heat dissipation, they confront the issue of thermal considerations and techniques for circuit layout and package mounting. In addition, the MMICs are offered in exceptionally small outline packages like the 4-×-4-mm QFN. Among the other specific characteristics for the ECP200 power amplifier are a single-stage MMIC design with built-in ESD protection, a Vde of up to 7 V, Class A/AB selectivity, and temperature-compensation bias. Power up/down sequencing is available along with partial-input-matching circuitry that has been built on chip. For more information on this series of power amplifiers, go to www.eiccorp.com.


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