To fulfill wireless designers' need for low-power memory at a decent price, Integrated Silicon Solution, Inc. (ISSI) has announced two MCPs that combine NOR-type Flash with Pseudo SRAM. The products offer high-density random-access memory (RAM) by using 16-Mb or 32-Mb Pseudo SRAM (PSRAM) and a 64-Mb Flash.

By utilizing a single-cell DRAM core with a simple SRAM I/O interface, the PSRAM technology achieves higher density, lower power per bit, and smaller die size. Functionally, the PSRAM serves as a buffer and working memory. The NOR-type Flash memory stores the data, operation codes, and communication protocols. It offers user-configurable banks for better performance and flexibility.

The products support supply and I/O voltages ranging from 2.7 to 3.1 V. The fast access times are 70 ns for Flash and 70 ns maximum for PSRAMs. Both memories have a low standby and operating current at 70 mA. In quantities of 10,000, the IS75V16F64GS16 and IS75V16F64GS32 are priced at $20 and $25, respectively. Both devices are packaged in a 65-pin BGA. Samples and production quantities are available now.

Integrated Silicon Solution, Inc.
2231 Lawson Ln., Santa Clara, CA 95054; (800) 379-4774, www.issi.com.