With a noise figure of just 0.35 dB (typical) and 19-dB of associated gain at 2 GHz, NEC’s latest GaAs HJ-FET low-noise amplifier, the NE3510M04, is well suited for use as a first stage amplifier in satellite radio antenna applications. The device comes in a 1.25- by 2.0- by 0.59-mm, RoHS-compliant package, making it suitable for compact, low-profile designs (view the amplifier here). The device operates at L-band to S-band frequencies with a V_DS of 2 V. At 2 GHz, I_D is 10 mA. At 4 GHz, the typical noise figure is 0.45 dB, gain is 16 dB, and I_D is 15 mA.

The NE3510M04 is in stock at California Eastern Labs and available in bulk or on tape and reel. For more information and a data sheet, visit www.cel.com.